In this brief, a new write assist technique is proposed to improve the write characteristics of 1T-1MTJ STT-RAM bitcell through a symmetric write operation. This is done by applying a negative voltage to the bitline during write ‘1’ operation...

The perpendicular anisotropy Spin-Transfer Torque Random Access Memory (P-STT-RAM) is considered

to be a promising candidate for high-density memories. Many distinct advantages of Perpendicular

Magnetic Tunnel Junction (P-MTJ) compared...

Spin Transfer Torque Random Access Memory (STT-RAM) is a serious candidate for “universal memory”

because of its non-volatility, fast access time, high density, good scalability, high endurance and relatively

low power dissipation...

Spin-transfer torque random-access memory (STT-RAM) is a nonvolatile, scalable, and fast memory structure, which benefits from high endurance and relatively low power consumption. However, there are some challenges in designing STT-RAM...

Spin-transfer torque random access memory (STT-RAM) has emerged as an attractive candidate for future

non-volatile memories. However, the write operation in 1T-1MTJ STT-RAM bit-cells is asymmetric and stochastic which leads to high energy...

Spin-transfer torque random access memory (STT-RAM) has emerged as an attractive candidate for future nonvolatile memories. It advantages the benefits of current stateof-the-art memories including high-speed read operation (of static RAM), high...