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نمایش تعداد 1-10 از 130
Perpendicular STT_RAM cell in 8 nm technology node using Co1/Ni3(1 1 1)
Gr2
سال: 2018
خلاصه:
product of a P-MTJ in order to avoid a high write voltage as technology is scaled down. A new graphene based STT-RAM cell for 8 nm technology node that uses high perpendicular magnetic anisotropy cobalt/
nickel (Co/Ni) multilayer as magnetic layers...
Dynamic network partition via Bayesian connectivity bi-partition change point model
ناشر: IEEE
سال: 2014
Virtual-to-Physical Mapping Inference in Virtualized Cloud Environments
ناشر: IEEE
سال: 2014
Keystone transform based range-Doppler processing for human target in UWB radar
ناشر: IEEE
سال: 2014
Multi-Agent-based distributed optimization for Demand-Side-Management applications
ناشر: IEEE
سال: 2014