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نمایش تعداد 1-10 از 97

An Oxygen Gettering Scheme for Improving Device Mobility and Subthreshold Swing of InGaZnO-Based Thin-Film Transistor

نوع: Journal Paper

نویسنده : Hsiao-Hsuan Hsu; Chun-Yen Chang; Chun-Hu Cheng; Shan-Haw Chiou; Chiung-Hui Huang; Yu-Chien Chiu

ناشر: IEEE

سال: 2014

The prediction of power distribution transformer faults frequency based on high-order Markov

نوع: Conference Paper

نویسنده : Baoping Zou; Zhongwei Wang; Yixin Chen; Hong Zhen; Dongdong Xu

ناشر: IEEE

سال: 2014

Two-Dimensional Numerical Simulation of Bottom-Gate and Dual-Gate Amorphous In-Ga-Zn-O MESFETs

نوع: Journal Paper

نویسنده : Chumin Zhao; Linsen Bie; Rui Zhang; Kanicki, J.

ناشر: IEEE

سال: 2014

The analysis of the integral cycle delay of the electronic transformer and the research on the detection technology

نوع: Conference Paper

نویسنده : Zhang, Jian; Duan, Meimei; Mu, Xiaoxing

ناشر: IEEE

سال: 2014

Nonvolatile Charge-Trap Memory Transistors With Top-Gate Structure Using In–Ga–Zn-O Active Channel and ZnO Charge-Trap Layer

نوع: Journal Paper

نویسنده : Jun Yong Bak; Min-Ki Ryu; Sang Hee Ko Park; Chi Sun Hwang; Sung Min Yoon

ناشر: IEEE

سال: 2014

An a-InGaZnO TFT Pixel Circuit Compensating Threshold Voltage and Mobility Variations in AMOLEDs

نوع: Journal Paper

نویسنده : Yongchan Kim; Kanicki, J.; Hojin Lee

ناشر: IEEE

سال: 2014

A 75mW 50Gbps SerDes transmitter with automatic serializing time window search in 65nm CMOS technology

نوع: Conference Paper

نویسنده : Ke Huang; Ziqiang Wang; Xuqiang Zheng; Chun Zhang; Zhihua Wang

ناشر: IEEE

سال: 2014

Effect of Temperature and Electric Field on Degradation in Amorphous InGaZnO TFTs Under Positive Gate and Drain Bias Stress

نوع: Journal Paper

نویسنده : Jong In Kim; In-Tak Cho; Sung-Min Joe; Chan-Yong Jeong; Daeun Lee; Hyuck-In Kwon; Sung Hun Jin; Jong-Ho Lee

ناشر: IEEE

سال: 2014

InGaZnO metal-base transistor with high current gain

نوع: Journal Paper

نویسنده : Huang, H.Y.; Wang, S.J.; Hung, C.H.; Wu, Cathy H.; Lin, W.C.

ناشر: IET

سال: 2014

Effects of Gate Dielectric and Process Treatments on the Electrical Characteristics of IGZO TFTs With Film Profile Engineering

نوع: Journal Paper

نویسنده : Bo-Shiuan Shie; Horng-Chih Lin; Rong-Jye Lyu; Tiao-Yuan Huang

ناشر: IEEE

سال: 2014

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An Oxygen Gettering Scheme for Improving Device Mobility and Subthreshold Swing of InGaZnO-Based Thin-Film Transistor

The prediction of power distribution transformer faults frequency based on high-order Markov

Two-Dimensional Numerical Simulation of Bottom-Gate and Dual-Gate Amorphous In-Ga-Zn-O MESFETs

The analysis of the integral cycle delay of the electronic transformer and the research on the detection technology

Nonvolatile Charge-Trap Memory Transistors With Top-Gate Structure Using In–Ga–Zn-O Active Channel and ZnO Charge-Trap Layer

An a-InGaZnO TFT Pixel Circuit Compensating Threshold Voltage and Mobility Variations in AMOLEDs

A 75mW 50Gbps SerDes transmitter with automatic serializing time window search in 65nm CMOS technology

Effect of Temperature and Electric Field on Degradation in Amorphous InGaZnO TFTs Under Positive Gate and Drain Bias Stress

InGaZnO metal-base transistor with high current gain

Effects of Gate Dielectric and Process Treatments on the Electrical Characteristics of IGZO TFTs With Film Profile Engineering

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An Oxygen Gettering Scheme for Improving Device Mobility and Subthreshold Swing of InGaZnO-Based Thin-Film Transistor

The prediction of power distribution transformer faults frequency based on high-order Markov

Two-Dimensional Numerical Simulation of Bottom-Gate and Dual-Gate Amorphous In-Ga-Zn-O MESFETs

The analysis of the integral cycle delay of the electronic transformer and the research on the detection technology

Nonvolatile Charge-Trap Memory Transistors With Top-Gate Structure Using In&#x2013;Ga&#x2013;Zn-O Active Channel and ZnO Charge-Trap Layer

An a-InGaZnO TFT Pixel Circuit Compensating Threshold Voltage and Mobility Variations in AMOLEDs

A 75mW 50Gbps SerDes transmitter with automatic serializing time window search in 65nm CMOS technology

Effect of Temperature and Electric Field on Degradation in Amorphous InGaZnO TFTs Under Positive Gate and Drain Bias Stress

InGaZnO metal-base transistor with high current gain

Effects of Gate Dielectric and Process Treatments on the Electrical Characteristics of IGZO TFTs With Film Profile Engineering

Nonvolatile Charge-Trap Memory Transistors With Top-Gate Structure Using In–Ga–Zn-O Active Channel and ZnO Charge-Trap Layer