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    Iteration regularized semigroups of set-valued functions 

    Type: Journal Paper
    Author : مسعود مصلی نژاد; محمد جانفدا; Masood Mosallanezhad; Mohammad Janfada
    Year: 2016
    Abstract:

    In this paper, a set-valued iteration regularized semigroup, i.e. a family $\\{F^t\\}_{t\\geq0}$ of set-valued functions for which

    $$F^{s+t} \\circ C=F^s \\circ F^t,\\ \\ F^0=C \\ \\ \\ s,t\\geq0 $$ \\\\

    will be considered where $C...

    ITERATION REGULARIZED SEMIGROUPS OF SET-VALUED FUNCTIONS 

    Type: Conference Paper
    Author : محمد جانفدا; مسعود مصلی نژاد; Mohammad Janfada; Masood Mosallanezhad
    Year: 2016
    Abstract:

    In this paper a set-valued iteration regularized semi-

    group

    $$F^{s+t}o C = F^so F^t; F^0 = C, s; t > 0

    will be considered, where $\\{F^t}_{t\\geq 0}$ is a one parameter family of set-

    valued functions...

    On maximization of the likelihood for the generalized gamma distribution 

    Type: Journal Paper
    Author : Noufaily, A. - Jones, M.C.
    Publisher: Springer-Verlag
    Year: 2013

    Comparison of Low Field Electron Transport in SiC and GaN Structures for High-Power and High-Temperature Device Modeling 

    Type: Journal Paper
    Author : محمود رضائی رکن آبادی; هادی عربشاهی; M. R. Benam; Mahmood Rezaee Roknabadi; Hadi Arabshahi
    Year: 2008
    Abstract:

    Comparison of Low Field Electron Transport in SiC and GaN Structures for High-Power and High-Temperature Device Modeling

    The limit law of the iterated logarithm in Banach space 

    Type: Journal Paper
    Author : Li, Deli - Liang, Han
    Publisher: Elsevier Science
    Year: 2013

    Online allocation of virtual machines in a distributed cloud 

    Type: Conference Paper
    Publisher: IEEE
    Year: 2014

    Calculated of Electron Mobility in InN by Monte Carlo and Iteration Models 

    Type: Journal Paper
    Author : A. Vatan-khahan; R. Khoshlahni; هادی عربشاهی; Hadi Arabshahi
    Year: 2011
    Abstract:

    Electron mobility in InN is calculated using by

    Monte Carlo and Iteration mode as a function of temperature and the electron density....

    Comparison of Electron Scattering Mechanisims and Electron Mobility in AlN and GaN at Low Electric Field Application 

    Type: Journal Paper
    Author : A. Vatan-khahan; M. H . Tayarani; A. Sadremomtaz; هادی عربشاهی; Hadi Arabshahi
    Year: 2011
    Abstract:

    Iterative technique is used to solve Boltzmann

    transport equation in bulk wurtzite phase GaN and AlN at

    central valley conduction band. The electron mobility is

    calculated as a function of temperature and ionized...

    Comparison of Low Field Electron Transport Properties in CdTe and HgCdTe Semiconductors 

    Type: Journal Paper
    Author : A. Salehi Shahr-Babaki; هادی عربشاهی; Hadi Arabshahi
    Year: 2011
    Abstract:

    Electron mobility in CdTe and HgCdTe are

    calculated, by solving Boltzmann equation using iteration

    model, as a function of temperature for carrier

    concentrations of 1016, 1017, and 1018 cm-3. Both CdTe and

    HgCdTe have...

    Variational iteration method for solving mth-order boundary value problems 

    Type: Journal Paper
    Author : جعفر صابری نجفی; فهیمه اخوان قصاب زاده; Jafar Saberi- Nadjafi
    Year: 2010
    Abstract:

    In this paper, the variational iteration method is applied to solve mth-order boundary value problems. Using this method we only need to apply an iteration to obtain solutions of remarkable accuracy. By giving 3 examples and by comparing...

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