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Internal Quantum Efficiency Enhancement by Relieving Compressive Stress of GaN-Based LED

Type: Journal Paper

Author : Yi Chin Lin; Wei Chih Liu; Chia Lun Chang; Chao Chi Chung; Yan Hao Chen; Te Yuan Chung; Cheng Yi Liu

Publisher: IEEE

Year: 2014

High-Efficiency and Crack-Free InGaN-Based LEDs on a 6-inch Si (111) Substrate With a Composite Buffer Layer Structure and Quaternary Superlattices Electron-Blocking Layers

Type: Journal Paper

Author : Zhen-Yu Li; Chia-Yu Lee; Da-Wei Lin; Bing-Cheng Lin; Kun-Ching Shen; Ching-Hsueh Chiu; Po-Min Tu; Hao-Chung Kuo; Wu-Yih Uen; Ray-Hua Horng; Gou-Chung Chi; Chun-Yen Chang

Publisher: IEEE

Year: 2014

Implementation of High-Power GaN-Based LEDs With a Textured 3-D Backside Reflector Formed by Inserting a Self-Assembled <formula formulatype="inline"> <img src="/images/tex/16785.gif" alt="{\\rm SiO}_{2}"> </formula> Nanosphere Monolayer

Type: Journal Paper

Author : Jian-Kai Liou; Po-Cheng Chou; Chun-Chia Chen; Yu-Chih Chang; Wei-Chou Hsu; Shiou-Ying Cheng; Jung-Hui Tsai; Wen-Chan Liu

Publisher: IEEE

Year: 2014

Strong Enhancement in Light Output of GaN-Based LEDs With Graded-Refractive-Index ITO Deposited on Textured V-Shaped Pits

Type: Journal Paper

Author : Min-Shuai Wang; Lan Yang; Xiao-Jing Huang

Publisher: IEEE

Year: 2014

Pulsed Growth Epitaxial Method of GaN-Based Light-Emitting Diodes on Patterned SiO<sub>2</sub> AlN/Sapphire Template

Type: Journal Paper

Author : Yu-An Chen; Cheng-Huang Kuo; Li-Chuan Chang; Ji-Pu Wu

Publisher: IEEE

Year: 2014

The GaN-Based Light Emitting Diode Grown on Nanopattern Sapphire Substrate Prepared by Inductively Coupled Plasma Etching

Type: Journal Paper

Author : Jyun-Hao Lin; Shyh-Jer Huang; Yan-Kuin Su; Kai-Wen Huang

Publisher: IEEE

Year: 2014

Enhancement of GaN-Based Light-Emitting Diodes Transferred From Si (111) Substrate Onto Electroplating Cu Submount With TiO<formula formulatype="inline"> <img src="/images/tex/517.gif" alt="_{2}"> </formula>/SiO<formula formulatype="inline"> <img src="/images/tex/517.gif" alt="_{2}"> </formula>–Al Omnidirectional Reflector

Type: Journal Paper

Author : Yibin Yang; Gangwei Hu; Peng Xiang; Minggang Liu; Weijie Chen; Xiaobiao Han; Guoheng Hu; Yan Lin; Xiuqi Lin; Wenjie Zang; Zhisheng Wu; Yang Liu; Baijun Zhang

Publisher: IEEE

Year: 2014

Utilizing Two-Dimensional Photonic Crystals in Different Arrangement to Investigate the Correlation Between the Air Duty Cycle and the Light Extraction Enhancement of InGaN-Based Light-Emitting Diodes

Type: Journal Paper

Author : Ming-Lun Lee; Yao-Hong You; Ray-Ming Lin; Cheng-Ju Hsieh; Vin-Cent Su; Po-Hsun Chen; Chieh-Hsiung Kuan

Publisher: IEEE

Year: 2014

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Internal Quantum Efficiency Enhancement by Relieving Compressive Stress of GaN-Based LED

High-Efficiency and Crack-Free InGaN-Based LEDs on a 6-inch Si (111) Substrate With a Composite Buffer Layer Structure and Quaternary Superlattices Electron-Blocking Layers

Implementation of High-Power GaN-Based LEDs With a Textured 3-D Backside Reflector Formed by Inserting a Self-Assembled <formula formulatype="inline"> <img src="/images/tex/16785.gif" alt="{\\rm SiO}_{2}"> </formula> Nanosphere Monolayer

Strong Enhancement in Light Output of GaN-Based LEDs With Graded-Refractive-Index ITO Deposited on Textured V-Shaped Pits

Pulsed Growth Epitaxial Method of GaN-Based Light-Emitting Diodes on Patterned SiO<sub>2</sub> AlN/Sapphire Template

The GaN-Based Light Emitting Diode Grown on Nanopattern Sapphire Substrate Prepared by Inductively Coupled Plasma Etching

Utilizing Two-Dimensional Photonic Crystals in Different Arrangement to Investigate the Correlation Between the Air Duty Cycle and the Light Extraction Enhancement of InGaN-Based Light-Emitting Diodes

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Internal Quantum Efficiency Enhancement by Relieving Compressive Stress of GaN-Based LED

High-Efficiency and Crack-Free InGaN-Based LEDs on a 6-inch Si (111) Substrate With a Composite Buffer Layer Structure and Quaternary Superlattices Electron-Blocking Layers

Implementation of High-Power GaN-Based LEDs With a Textured 3-D Backside Reflector Formed by Inserting a Self-Assembled <formula formulatype="inline"> <img src="/images/tex/16785.gif" alt="{\\rm SiO}_{2}"> </formula> Nanosphere Monolayer

Strong Enhancement in Light Output of GaN-Based LEDs With Graded-Refractive-Index ITO Deposited on Textured V-Shaped Pits

Pulsed Growth Epitaxial Method of GaN-Based Light-Emitting Diodes on Patterned SiO<sub>2</sub> AlN/Sapphire Template

The GaN-Based Light Emitting Diode Grown on Nanopattern Sapphire Substrate Prepared by Inductively Coupled Plasma Etching

Utilizing Two-Dimensional Photonic Crystals in Different Arrangement to Investigate the Correlation Between the Air Duty Cycle and the Light Extraction Enhancement of InGaN-Based Light-Emitting Diodes