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Now showing items 1-8 of 8

Internal Quantum Efficiency Enhancement by Relieving Compressive Stress of GaN-Based LED

Type: Journal Paper

Author : Yi Chin Lin; Wei Chih Liu; Chia Lun Chang; Chao Chi Chung; Yan Hao Chen; Te Yuan Chung; Cheng Yi Liu

Publisher: IEEE

Year: 2014

Application Layer Protocols for Disruption Tolerant Remote Sensor SATCOM Links

Type: Conference Paper

Author : Gormally, John M.; Richards, Ronald L.

Publisher: IEEE

Year: 2014

Effect of Stair-Case Electron Blocking Layer on the Performance of Blue InGaN Based LEDs

Type: Journal Paper

Author : Taiping Lu; Ziguang Ma; Chunhua Du; Yutao Fang; Fangsheng Chen; Yang Jiang; Lu Wang; Haiqiang Jia; Hong Chen

Publisher: IEEE

Year: 2014

Implementation of High-Power GaN-Based LEDs With a Textured 3-D Backside Reflector Formed by Inserting a Self-Assembled <formula formulatype="inline"> <img src="/images/tex/16785.gif" alt="{\\rm SiO}_{2}"> </formula> Nanosphere Monolayer

Type: Journal Paper

Author : Jian-Kai Liou; Po-Cheng Chou; Chun-Chia Chen; Yu-Chih Chang; Wei-Chou Hsu; Shiou-Ying Cheng; Jung-Hui Tsai; Wen-Chan Liu

Publisher: IEEE

Year: 2014

Wireless-datacenter backhaul over hardware virtualized flexible optical network

Type: Conference Paper

Publisher: IEEE

Year: 2014

Strong Enhancement in Light Output of GaN-Based LEDs With Graded-Refractive-Index ITO Deposited on Textured V-Shaped Pits

Type: Journal Paper

Author : Min-Shuai Wang; Lan Yang; Xiao-Jing Huang

Publisher: IEEE

Year: 2014

Multiple Nanostructures on Full Surface of GZO/GaN-Based LED to Enhance Light-Extraction Efficiency Using a Solution-Based Method

Type: Journal Paper

Author : Shih-Chang Shei

Publisher: IEEE

Year: 2014

Experimental and Numerical Analysis of p-Electrode Patterns on the Lateral GaN-Based LEDs

Type: Journal Paper

Author : Yeeu-Chang Lee; Farn-Shiun Hwu; Ming-Chieh Yang; Cheng-Yi Lin

Publisher: IEEE

Year: 2014

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Internal Quantum Efficiency Enhancement by Relieving Compressive Stress of GaN-Based LED

Application Layer Protocols for Disruption Tolerant Remote Sensor SATCOM Links

Effect of Stair-Case Electron Blocking Layer on the Performance of Blue InGaN Based LEDs

Implementation of High-Power GaN-Based LEDs With a Textured 3-D Backside Reflector Formed by Inserting a Self-Assembled <formula formulatype="inline"> <img src="/images/tex/16785.gif" alt="{\\rm SiO}_{2}"> </formula> Nanosphere Monolayer

Wireless-datacenter backhaul over hardware virtualized flexible optical network

Strong Enhancement in Light Output of GaN-Based LEDs With Graded-Refractive-Index ITO Deposited on Textured V-Shaped Pits

Multiple Nanostructures on Full Surface of GZO/GaN-Based LED to Enhance Light-Extraction Efficiency Using a Solution-Based Method

Experimental and Numerical Analysis of p-Electrode Patterns on the Lateral GaN-Based LEDs

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Internal Quantum Efficiency Enhancement by Relieving Compressive Stress of GaN-Based LED

Application Layer Protocols for Disruption Tolerant Remote Sensor SATCOM Links

Effect of Stair-Case Electron Blocking Layer on the Performance of Blue InGaN Based LEDs

Implementation of High-Power GaN-Based LEDs With a Textured 3-D Backside Reflector Formed by Inserting a Self-Assembled <formula formulatype="inline"> <img src="/images/tex/16785.gif" alt="{\\rm SiO}_{2}"> </formula> Nanosphere Monolayer

Wireless-datacenter backhaul over hardware virtualized flexible optical network

Strong Enhancement in Light Output of GaN-Based LEDs With Graded-Refractive-Index ITO Deposited on Textured V-Shaped Pits

Multiple Nanostructures on Full Surface of GZO/GaN-Based LED to Enhance Light-Extraction Efficiency Using a Solution-Based Method

Experimental and Numerical Analysis of p-Electrode Patterns on the Lateral GaN-Based LEDs