This article presents the design and fabrication of a 6 W X-band hybrid Class-J power amplifier (PA) based on a bare die GaN on SiC HEMT by accurate implementing the transistor nonlinear capacitor effects. The transistor ...

In this paper, a design methodology for realization of hybrid microwave power amplifiers (PAs) using discrete GaN HEMTs is systematically explained. High power solid-state amplifiers usually suffer from self-heating, high frequency instability...

-band frequency. According to these considerations, a 30- watt power amplifier with a GaN-HEMT transistor over 8.8 to 9.8GHz has been designed and fabricated. The power gain,power added efficiency and 1dB compression point of the fabricated circuit are 9.2dB, 53...

Gallium-nitride (GaN) high electron mobility transistors (HEMTs) with step aluminum mole fraction or doping concentration in the barrier is reported. The barrier layer is divided into two Source Side (SS) and Drain Side ...

This paper presents the first implementation of hybrid 8.8-9.6 GHz X-band class J power amplifier (PA)

designed with a GaN HEMT power transistor. High efficiency power amplifiers suffer from nonlinear performance and relatively low bandwidth...