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RISTemperature Dependence of High Field Electron Transport Properties in Wurtzite Phase GaN for Device Modeling
An ensemble Monte Carlo simulation has been used to model bulk electron transport at room and higher temperature as a function of high electric fields.
ICT Integrated Social Media Framework for consumer awareness in society using ICT tools
A time-delay approach for modeling and control of mist in a poiseuille flow
Can the bounds in the multivariate Chebyshev inequality be attained?
Measuring quantum discord using the most distinguishable steered states
Any two-qubit state can be represented, geometrically, as an ellipsoid with a certain size and a center located within the Bloch sphere of one of the qubits. Points of this ellipsoid represent the post-measurement states when the other qubit...
Comparison of electron transport properties in submicrometer ZnS and ZnO n+nn+ diode using ensemble Monte Carlo simulation
valleys are based on a three-valley model which are represented by
nonparabolic ellipsoidal valleys centered on the important symmetry point of the first Brillouin zone.
Our calculation shows that the saturation mean drift velocity...
Hot Electron Transport Properties in Characteristics of Wurtzite GaN MESFETs Using a Five-valley Model
-parabolic ellipsoidal valleys centred on important symmetry points of the Brillouin zone. The following scattering mechanisims, i.e, impurity, polar optical phonon, acoustic phonon,alloy and piezoelectric are inculded in the calculation. Ionized imurity scattering has...