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نمایش تعداد 1-10 از 454
Detrmenation of hole drain in dams and hydraulic structures in order to reduce the seepage in water structures by geo studio models
Check dams are transverse structures built across stream-beds and gullies and made of stones, gabions, masonry, concrete, or logs. They are designed mainly to control water and sediment flows, conserve soil and improve ...
The Effect of Gate Length on SOI-MOSFETs Based on ZnO Material
fixed channel length, when the gate length is increased, the
output drain current characteristics is decreased and
therefore the transistor transconductance decreases.
Moreover, with increasing the gate length, the effect of the
drain...
LONG TERM CYCLIC PERFORMANCE OF GRANULAR MATERIAL
results from plane strain biaxial tests on sand under drained cyclic conditions. Cycles of unloading and reloading show significant hysteresis indicating plastic response. The plastic strain during successive cycles tends to reduce with an increasing...
Hydrodynamic Model for Non-equilibrium and Hot Electron Transport in ZnO MESFETs
hydrodynamic model. These solutions allow to calculate the electron drift velocity and other device parameters as a
function of the applied electric field. Using hydrodynamic method our calculation results show that due to the high
drain current density...
The Effect of Gate Length and Temperature on ZnO MOSFETs Operation
is decreased, the output drain current is increased, and therefore the
transistor transconductance increases. Moreover, with increasing temperature the drain current is
reduced, which results in the reduced drain barrier lowering. The simulated...
The Effect of Gate Length on SOI-MOSFETs Operation
nm are simulated. Simulations show that with a
fixed channel length, when the gate length is increased, the output drain current characteristics
slope is increased, and therefore the transistor transconductance increases. Moreover, with...
Reducing Short Channel Effects in Dual Gate SOI-MOSFETs with a Drain Dependent Gate Bias
In this paper we propose a new dual gate SOI-MOSFET in order to reduce short-channel effects (SCEs). In the proposed structure, the bias of the second gate which is near the drain is dependent on the drain voltage. To investigate transistor...