are represented by non-parabolic ellipsoidal valleys

centred on important symmetry points of the Brillouin zone. The simulation shows that

intervalley electron transfer plays a dominant role in GaN in high electric fields leading to a...

are represented

by non-parabolic ellipsoidal valleys centred on important symmetry points of the Brillouin zone. The following scattering

mechanisims, i.e, impurity, polar optical phonon, acoustic phonon, alloy and piezoelectric are inculded...

valleys are based on a three-valley model which are represented by

nonparabolic ellipsoidal valleys centered on the important symmetry point of the first Brillouin zone.

Our calculation shows that the saturation mean drift velocity...

of the Brillouin zone are fitted to the first-principles band structure. The electron drift velocity is calculated as a function of temperature and ionized donor concentration in the ranges of

300-600 K and 1016-1020 cm-3, respectively. Due to the freezout...

-parabolic

ellipsoidal valleys centered on important symmetry points of the Brillouin zone. For all materials it is found that electron

velocity overshoot only occurs when the electric field is increased to a value above a certain critical field, unique to...