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نمایش تعداد 1-6 از 6

AlN/AlGaN HEMTs on AlN substrate for stable high-temperature operation

نوع: Journal Paper

نویسنده : Yafune, N.; Hashimoto, Shuji; Akita, K.; Yamamoto, Yusaku; Tokuda, Hirokuni; Kuzuhara, Masaaki

ناشر: IET

سال: 2014

Influence of AlN Thin Film as Thermal Interface Material on Thermal and Optical Properties of High-Power LED

نوع: Journal Paper

نویسنده : Subramani, Siva; Devarajan, Mutharasu

ناشر: IEEE

سال: 2014

Updating the new French national land cover database

نوع: Conference Paper

نویسنده : Gressin, A.; Mallet, C.; Vincent, N.; Paparoditis, N.

ناشر: IEEE

سال: 2014

Pulsed Growth Epitaxial Method of GaN-Based Light-Emitting Diodes on Patterned SiO<sub>2</sub> AlN/Sapphire Template

نوع: Journal Paper

نویسنده : Yu-An Chen; Cheng-Huang Kuo; Li-Chuan Chang; Ji-Pu Wu

ناشر: IEEE

سال: 2014

<inline-formula> <img src="/images/tex/21676.gif" alt="{\\rm SiN}_{x}"> </inline-formula>/InAlN/AlN/GaN MIS-HEMTs With 10.8 <inline-formula> <img src="/images/tex/21677.gif" alt="{\\rm THz}\\cdot{\\rm V}"> </inline-formula> Johnson Figure of Merit

نوع: Journal Paper

نویسنده : Downey, Brian P.; Meyer, D.J.; Katzer, D. Scott; Roussos, Jason /A/.; Ming Pan; Xiang Gao

ناشر: IEEE

سال: 2014

Extreme bending test of IGZO TFT

نوع: Conference Paper

نویسنده : Sejin Hong , Mativenga, M. , Jin Jang

ناشر: IEEE

سال: 2014

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AlN/AlGaN HEMTs on AlN substrate for stable high-temperature operation

Influence of AlN Thin Film as Thermal Interface Material on Thermal and Optical Properties of High-Power LED

Updating the new French national land cover database

Pulsed Growth Epitaxial Method of GaN-Based Light-Emitting Diodes on Patterned SiO<sub>2</sub> AlN/Sapphire Template

<inline-formula> <img src="/images/tex/21676.gif" alt="{\\rm SiN}_{x}"> </inline-formula>/InAlN/AlN/GaN MIS-HEMTs With 10.8 <inline-formula> <img src="/images/tex/21677.gif" alt="{\\rm THz}\\cdot{\\rm V}"> </inline-formula> Johnson Figure of Merit

Extreme bending test of IGZO TFT

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AlN/AlGaN HEMTs on AlN substrate for stable high-temperature operation

Influence of AlN Thin Film as Thermal Interface Material on Thermal and Optical Properties of High-Power LED

Updating the new French national land cover database

Pulsed Growth Epitaxial Method of GaN-Based Light-Emitting Diodes on Patterned SiO<sub>2</sub> AlN/Sapphire Template

<inline-formula> <img src="/images/tex/21676.gif" alt="{\\rm SiN}_{x}"> </inline-formula>/InAlN/AlN/GaN MIS-HEMTs With 10.8 <inline-formula> <img src="/images/tex/21677.gif" alt="{\\rm THz}\\cdot{\\rm V}"> </inline-formula> Johnson Figure of Merit

Extreme bending test of IGZO TFT