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نمایش تعداد 1-10 از 29
Gate length scaling effect on high electron mobility transistors devices using AlGaN/GaN and AlInN/AlN/GaN heterostructures
ناشر: American Scientific Publishers
سال: 2014
The impact of training data tailoring on demand forecasting models in retail
ناشر: IEEE
سال: 2014
Slip prevention of a humanoid robot by coordinating acceleration vector
ناشر: IEEE
سال: 2014
Modeling of GaN-Based Normally-Off FinFET
ناشر: IEEE
سال: 2014
Global Modeling of Active Terahertz Plasmonic Devices
ناشر: IEEE
سال: 2014
Impact of Donor Traps on the 2DEG and Electrical Behavior of AlGaN/GaN MISFETs
ناشر: IEEE
سال: 2014
PhyTraces: Simulating New RF Environments with Physical Layer Traces
ناشر: IEEE
سال: 2014