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Comparison of hydrogen absorption in metallic and semiconductor single-walled Ge- and GeO2- doped carbon nanotubes

Type: Journal Paper

Author : سیدوحید حسینی; هادی عربی; احمد کمپانی; Seyed Vahid Hosseini; Hadi Arabi; Ahmad Kompany

Year: 2017

Abstract:

First-principles calculations were carried out to compare hydrogen absorption in pristine

metallic and semiconductor carbon nanotubes (CNTs) with the situation in their Ge- and

GeO2-doped counterparts. We found out that the pristine...

Surface Passivation of Ge MOS Devices by <formula formulatype="inline"> <img src="/images/tex/21412.gif" alt="{\\rm SmGeO}_{\\bf{x}}"> </formula> With Sub-nm EOT

Type: Journal Paper

Author : Chia-Chun Lin; Yung-Hsien Wu; Chao-Yi Wu; Ching-Wei Lee

Publisher: IEEE

Year: 2014

Context-Oriented Programming for Adaptive Wireless Sensor Network Software

Type: Conference Paper

Author : Afanasov, M. , Mottola, L. , Ghezzi, C.

Publisher: IEEE

Year: 2014

Improved Electrical Characteristics of Ge MOS Devices With High Oxidation State in <inline-formula> <img src="/images/tex/21682.gif" alt="{\\rm HfGeO}_{\\rm x}"> </inline-formula> Interfacial Layer Formed by <italic>In Situ</italic> Desorption

Type: Journal Paper

Author : Chen-Chien Li; Kuei-Shu Chang-Liao; Li-Jung Liu; Tzu-Min Lee; Chung-Hao Fu; Ting-Ching Chen; Jen-Wei Cheng; Chun-Chang Lu; Tien-Ko Wang

Publisher: IEEE

Year: 2014

Scintillation Efficiency Improvement by Mixed Crystal Use

Type: Journal Paper

Publisher: IEEE

Year: 2014

Evaluating Q-learning based stateful round trip time estimation over high-data-rate wireless sensor networks

Type: Conference Paper

Author : Islam, A.B.M.Alim Al; Raghunathan, Vijay

Publisher: IEEE

Year: 2014

Physical Origins of High Normal Field Mobility Degradation in Ge p- and n-MOSFETs With GeO<sub><italic>x</italic></sub>/Ge MOS Interfaces Fabricated by Plasma Postoxidation

Type: Journal Paper

Author : Rui Zhang; Xiao Yu; Takenaka, Mitsuru; Takagi, Shinichi

Publisher: IEEE

Year: 2014

Highly Integrated FP/FBG Sensor for Simultaneous Measurement of High Temperature and Strain

Type: Journal Paper

Author : Qin Liu; Zeng Ling Ran; Yun Jiang Rao; Shu Cheng Luo; Hui Qin Yang; Ya Huang

Publisher: IEEE

Year: 2014

Simulation of physiological response to dynamic contents

Type: Conference Paper

Author : Isiaka, Fatima; Mailafiya, Adamu I.

Publisher: IEEE

Year: 2014

Impact of Plasma Postoxidation Temperature on the Electrical Properties of <formula formulatype="inline"> <img src="/images/tex/21365.gif" alt="{\\rm Al}_{2}{\\rm O}_{3}/{\\rm GeO}_{x}/{\\rm Ge}"> </formula> pMOSFETs and nMOSFETs

Type: Journal Paper

Author : Rui Zhang; Ju-Chin Lin; Xiao Yu; Takenaka, Mitsuru; Takagi, Shinichi

Publisher: IEEE

Year: 2014

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Comparison of hydrogen absorption in metallic and semiconductor single-walled Ge- and GeO2- doped carbon nanotubes

Surface Passivation of Ge MOS Devices by <formula formulatype="inline"> <img src="/images/tex/21412.gif" alt="{\\rm SmGeO}_{\\bf{x}}"> </formula> With Sub-nm EOT

Context-Oriented Programming for Adaptive Wireless Sensor Network Software

Improved Electrical Characteristics of Ge MOS Devices With High Oxidation State in <inline-formula> <img src="/images/tex/21682.gif" alt="{\\rm HfGeO}_{\\rm x}"> </inline-formula> Interfacial Layer Formed by <italic>In Situ</italic> Desorption

Scintillation Efficiency Improvement by Mixed Crystal Use

Evaluating Q-learning based stateful round trip time estimation over high-data-rate wireless sensor networks

Physical Origins of High Normal Field Mobility Degradation in Ge p- and n-MOSFETs With GeO<sub><italic>x</italic></sub>/Ge MOS Interfaces Fabricated by Plasma Postoxidation

Highly Integrated FP/FBG Sensor for Simultaneous Measurement of High Temperature and Strain

Simulation of physiological response to dynamic contents

Impact of Plasma Postoxidation Temperature on the Electrical Properties of <formula formulatype="inline"> <img src="/images/tex/21365.gif" alt="{\\rm Al}_{2}{\\rm O}_{3}/{\\rm GeO}_{x}/{\\rm Ge}"> </formula> pMOSFETs and nMOSFETs

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Comparison of hydrogen absorption in metallic and semiconductor single-walled Ge- and GeO2- doped carbon nanotubes

Surface Passivation of Ge MOS Devices by <formula formulatype="inline"> <img src="/images/tex/21412.gif" alt="{\\rm SmGeO}_{\\bf{x}}"> </formula> With Sub-nm EOT

Context-Oriented Programming for Adaptive Wireless Sensor Network Software

Improved Electrical Characteristics of Ge MOS Devices With High Oxidation State in <inline-formula> <img src="/images/tex/21682.gif" alt="{\\rm HfGeO}_{\\rm x}"> </inline-formula> Interfacial Layer Formed by <italic>In Situ</italic> Desorption

Scintillation Efficiency Improvement by Mixed Crystal Use

Evaluating Q-learning based stateful round trip time estimation over high-data-rate wireless sensor networks

Physical Origins of High Normal Field Mobility Degradation in Ge p- and n-MOSFETs With GeO<sub><italic>x</italic></sub>/Ge MOS Interfaces Fabricated by Plasma Postoxidation

Highly Integrated FP/FBG Sensor for Simultaneous Measurement of High Temperature and Strain

Simulation of physiological response to dynamic contents

Impact of Plasma Postoxidation Temperature on the Electrical Properties of <formula formulatype="inline"> <img src="/images/tex/21365.gif" alt="{\\rm Al}_{2}{\\rm O}_{3}/{\\rm GeO}_{x}/{\\rm Ge}"> </formula> pMOSFETs and nMOSFETs