In this paper, a novel double gate tunnel field effect transistor (DGTFET) configuration with p+-layer in the channel is proposed and investigated. The proposed structure is a Sichannel DGTFET, which has a p+-layer in the ...

This paper presents a 2-D analytic potential model for double-gate (DG) tunnel field effect transistors (TFETs) by solving the 2-D Poisson’s equation. From the potential profile, the electric field is derived and then the ...