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نمایش تعداد 1-7 از 7

High-Performance Metal-Insulator-Metal Tunnel Diode Selectors

نوع: Journal Paper

نویسنده : Govoreanu, B.; Adelmann, C.; Redolfi, A.; Leqi Zhang; Clima, S.; Jurczak, Malgorzata

ناشر: IEEE

سال: 2014

Impact of Electrode Composition and Processing on the Low-Frequency Noise in SrTio<sub>3</sub> MIM Capacitors

نوع: Journal Paper

نویسنده : Giusi, Gino; Aoulaiche, Marc; Swerts, Johan; Popovici, Mihaela; Redolfi, A.; Simoen, Eddy; Jurczak, Malgorzata

ناشر: IEEE

سال: 2014

Endurance of One Transistor Floating Body RAM on UTBOX SOI

نوع: Journal Paper

نویسنده : Aoulaiche, Marc; Bravaix, A.; Simoen, Eddy; Caillat, Christian; Moonju Cho; Witters, L.; Blomme, P.; Fazan, P.; Groeseneken, Guido; Jurczak, Malgorzata

ناشر: IEEE

سال: 2014

Ultrathin Metal/Amorphous-Silicon/Metal Diode for Bipolar RRAM Selector Applications

نوع: Journal Paper

نویسنده : Leqi Zhang; Redolfi, A.; Adelmann, C.; Clima, S.; Radu, Iuliana P.; Yang-Yin Chen; Wouters, D.J.; Groeseneken, Guido; Jurczak, Malgorzata; Govoreanu, B.

ناشر: IEEE

سال: 2014

Dynamic Modeling of Radiation-Induced State Changes in <formula formulatype="inline"> <img src="/images/tex/21563.gif" alt="{\\hbox {HfO}_2}/\\hbox {Hf}"> </formula> 1T1R RRAM

نوع: Journal Paper

نویسنده : Bennett, W.G.; Hooten, N.C.; Schrimpf, R.D.; Reed, R.A.; Alles, Michael L.; En Xia Zhang; Weeden-Wright, Stephanie L.; Linten, D.; Jurczak, Malgorzata; Fantini, Andrea

ناشر: IEEE

سال: 2014

Leakage Control in 0.4-nm EOT Ru/SrTiO<sub><italic>x</italic></sub>/Ru Metal-Insulator-Metal Capacitors: Process Implications

نوع: Journal Paper

نویسنده : Swerts, Johan; Popovici, Mihaela; Kaczer, Ben; Aoulaiche, Marc; Redolfi, A.; Clima, S.; Caillat, Christian; Wan Chih Wang; Afanasev, Valeri V.; Jourdan, Nicolas; Olk, Christina; Hody, Hubert; Van Elshocht, S.; Jurczak, Malgorzata

ناشر: IEEE

سال: 2014

TID and Displacement Damage Resilience of 1T1R <formula formulatype="inline"> <img src="/images/tex/21256.gif" alt="{\\rm HfO}_2/{\\rm Hf}"> </formula> Resistive Memories

نوع: Journal Paper

نویسنده : Weeden-Wright, Stephanie L.; Bennett, W.G.; Hooten, N.C.; En Xia Zhang; McCurdy, Michael W.; King, Michael P.; Weller, Robert /A/.; Mendenhall, Marcus H.; Alles, Michael L.; Linten, D.; Jurczak, Malgorzata; Degraeve, Robin; Fantini, Andrea; Reed, R.A.; Fleetwood, D.M.; Schrimpf, R.D.

ناشر: IEEE

سال: 2014

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High-Performance Metal-Insulator-Metal Tunnel Diode Selectors

Impact of Electrode Composition and Processing on the Low-Frequency Noise in SrTio<sub>3</sub> MIM Capacitors

Endurance of One Transistor Floating Body RAM on UTBOX SOI

Ultrathin Metal/Amorphous-Silicon/Metal Diode for Bipolar RRAM Selector Applications

Dynamic Modeling of Radiation-Induced State Changes in <formula formulatype="inline"> <img src="/images/tex/21563.gif" alt="{\\hbox {HfO}_2}/\\hbox {Hf}"> </formula> 1T1R RRAM

Leakage Control in 0.4-nm EOT Ru/SrTiO<sub><italic>x</italic></sub>/Ru Metal-Insulator-Metal Capacitors: Process Implications

TID and Displacement Damage Resilience of 1T1R <formula formulatype="inline"> <img src="/images/tex/21256.gif" alt="{\\rm HfO}_2/{\\rm Hf}"> </formula> Resistive Memories

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High-Performance Metal-Insulator-Metal Tunnel Diode Selectors

Impact of Electrode Composition and Processing on the Low-Frequency Noise in SrTio<sub>3</sub> MIM Capacitors

Endurance of One Transistor Floating Body RAM on UTBOX SOI

Ultrathin Metal/Amorphous-Silicon/Metal Diode for Bipolar RRAM Selector Applications

Dynamic Modeling of Radiation-Induced State Changes in <formula formulatype="inline"> <img src="/images/tex/21563.gif" alt="{\\hbox {HfO}_2}/\\hbox {Hf}"> </formula> 1T1R RRAM

Leakage Control in 0.4-nm EOT Ru/SrTiO<sub><italic>x</italic></sub>/Ru Metal-Insulator-Metal Capacitors: Process Implications

TID and Displacement Damage Resilience of 1T1R <formula formulatype="inline"> <img src="/images/tex/21256.gif" alt="{\\rm HfO}_2/{\\rm Hf}"> </formula> Resistive Memories