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نمایش تعداد 1-8 از 8

Impact of quantum modulation of the inversion charge in the MOSFET subthreshold regime

نوع: Conference Paper

نویسنده : Hiblot, G.; Rafhay, Q.; Boeuf, F.; Ghibaudo, G.

ناشر: IEEE

سال: 2014

Threshold Voltage Model for Short-Channel Undoped Symmetrical Double-Gate MOSFETs

نوع: Journal Paper

نویسنده : Tsormpatzoglou, A.; Dimitriadis, C.A.; Clerc, R.; Pananakakis, G.; Ghibaudo, G.

ناشر: IEEE

سال: 2008

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UTBB FD-SOI front- and back-gate coupling aware random telegraph signal impact analysis on a 6T SRAM

نوع: Conference Paper

نویسنده : Akyel, K.C; Ciampolini, L.; Thomas, O.; Turgis, D.; Ghibaudo, G.

ناشر: IEEE

سال: 2014

In depth characterization of hole transport in 14nm FD-SOI pMOS devices

نوع: Conference Paper

نویسنده : Shin, M.; Shi, M.; Mouis, M.; Cros, A.; Josse, E.; Kim, G.T.; Ghibaudo, G.

ناشر: IEEE

سال: 2014

Impact of Random Telegraph Signals on 6T high-density SRAM in 28nm UTBB FD-SOI

نوع: Conference Paper

نویسنده : Akyel, K.C.; Ciampolini, L.; Thomas, O.; Turgis, D.; Ghibaudo, G.

ناشر: IEEE

سال: 2014

Statistical analysis of dynamic variability in 28nm FD-SOI MOSFETs

نوع: Conference Paper

نویسنده : Ioannidis, E.G.; Haendler, S.; Theodorou, C.G.; Planes, N.; Dimitriadis, C.A.; Ghibaudo, G.

ناشر: IEEE

سال: 2014

The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies

نوع: Conference Paper

نویسنده : Monsieur, F.; Denis, Y.; Rideau, D.; Quenette, V.; Gouget, G.; Tavernier, C.; Jaouen, H.; Ghibaudo, G.; Lacord, J.

ناشر: IEEE

سال: 2014

nFET FDSOI activated by low temperature solid phase epitaxial regrowth: Optimization guidelines

نوع: Conference Paper

نویسنده : Pasini, L.; Batude, P.; Casse, M.; Brunet, L.; Rivallin, P.; Mathieu, B.; Lacord, J.; Martinie, S.; Fenouillet-Beranger, C.; Previtali, B.; Rambal, N.; Haond, M.; Ghibaudo, G.; Vinet, M.

ناشر: IEEE

سال: 2014

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Impact of quantum modulation of the inversion charge in the MOSFET subthreshold regime

Threshold Voltage Model for Short-Channel Undoped Symmetrical Double-Gate MOSFETs

UTBB FD-SOI front- and back-gate coupling aware random telegraph signal impact analysis on a 6T SRAM

In depth characterization of hole transport in 14nm FD-SOI pMOS devices

Impact of Random Telegraph Signals on 6T high-density SRAM in 28nm UTBB FD-SOI

Statistical analysis of dynamic variability in 28nm FD-SOI MOSFETs

The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies

nFET FDSOI activated by low temperature solid phase epitaxial regrowth: Optimization guidelines

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Impact of quantum modulation of the inversion charge in the MOSFET subthreshold regime

Threshold Voltage Model for Short-Channel Undoped Symmetrical Double-Gate MOSFETs

UTBB FD-SOI front- and back-gate coupling aware random telegraph signal impact analysis on a 6T SRAM

In depth characterization of hole transport in 14nm FD-SOI pMOS devices

Impact of Random Telegraph Signals on 6T high-density SRAM in 28nm UTBB FD-SOI

Statistical analysis of dynamic variability in 28nm FD-SOI MOSFETs

The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies

nFET FDSOI activated by low temperature solid phase epitaxial regrowth: Optimization guidelines