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نمایش تعداد 1-10 از 179
Comparison of Electron Scattering Mechanisims and Electron Mobility in AlN and GaN at Low Electric Field Application
Iterative technique is used to solve Boltzmann
transport equation in bulk wurtzite phase GaN and AlN at
central valley conduction band. The electron mobility is
calculated as a function of temperature and ionized-
impurity...
Comparison of Low Field Electron Transport Properties in CdTe and HgCdTe Semiconductors
Electron mobility in CdTe and HgCdTe are
calculated, by solving Boltzmann equation using iteration
model, as a function of temperature for carrier
concentrations of 1016, 1017, and 1018 cm-3. Both CdTe ...
Calculation of High Field Electron Transport Properties in GaSb and GaAs
model that includes numerical formulations
of the phonon scattering rates and ionized impurity
scattering rates. For two materials, we find that electron
velocity overshoot only occurs when the electric field in
increased to a...
Effect of High Field on Electron Mobility of InGaN
— Temperature and doping dependencies of
electron mobility in InGaN structure has been calculated in
steady-state and transient situation. The following
scattering mechanisms, i.e, impurity, polar optical phonon...
Calculation of High Field Electron Transport Properties in InN in Comparison with GaN
valleys ensemble
Monte Carlo model that includes numerical formulations
of the phonon scattering rates and ionized impurity
scattering rates. For two materials, we find that electron
velocity overshoot only...
Comparison of Low Field Electron Transport Properties in InN and GaN Semiconductors by Solving Boltzmann Equation Using Iteration Model
mobility in GaN and InN are
calculated, by solving Boltzmann equation using iteration
model, as a function of temperature for carrier
concentrations of 1016, 1017, and 1018 cm-3. Both GaN and
InN ...
Influence of Electron-Plasmon Scattering on Low-Field Mobility in ZnO
Temperature and doping dependencies of electron mobility in ZnO semiconductor has been calculated using an iterative
technique. The following scattering mechanisms, i.e., impurity, polar optical phonon, acoustic phonon, piezoelectric, and...
The role of impurities on the properties of electron transport through themetal/ Polyacetylene/ metal:a Green’s function approach
a b s t r a c t
In thiswork,wepresentatheoreticalstudyontheconductanceof trans-polyacetylene(trans-PA)
nanowireinthepresenceofimpuritiesanduseof trans-PA asamolecularbridgesandwichedbetween
two ...
Numerical calculation of the electron mobility in ZnS and ZnSe semiconductors using the iterative method
The electron mobility of ZnS and ZnSe semiconductor compounds were calculated by using the
iteration method. We considered polar optical phonon scattering, deformation potential acoustic,
piezoelectric and ionized impurity scattering...