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نمایش تعداد 1-10 از 87
Analysis and optimization of Tunnel FET with Band gap Engineering
سال: 2013
خلاصه:
in this paper a high performance double gate tunnel field effect transistor (DG-TFET) is proposed. Band gap engineering is achieved in order to improve the device performance. This novel TFET is formed from variable band gap materials with 20 nm...
Accent conversion through cross-speaker articulatory synthesis
ناشر: IEEE
سال: 2014
Integrated design and control of hypersonic vehicles
ناشر: IEEE
سال: 2014