. It is

found that GaSb exhibits an extremely low peak drift velocity at

room temperature 0.25×105 ms-1, at a doping concentration of

1017 cm-3 in comparison to GaAs. All dominant scattering

mechanisms in the structure...

(NDS) channel doping levels are studied in details. Simulation results illustrate that a larger NSS compared to NDS improves the breakdown voltage. On the other hand, decreasing NSS, reduces the gate-source capacitance. A larger channel doping...