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RISTechnological requirements for a self-aligned lateral SiGe HBT with the SiGe layer formed by Ge ion implantation in Si including theoretical performance
A new method for realization of self-aligned lateral SiGe-HBT (SiGe-SLHBT) is introduced and ac and dc simulations are performed based on a two-dimensional physical model. The fabrication process is simple and requires a minimum number of masks...
Impact of annealing on surface morphology and photoluminescence of self assembled Ge and Si quantum dots
A New Model Formulation for electron Interations in Ge
A New Model Formulation for electron Interations in Ge...
Small-signal characterization of SiGe-HBT fT-doubler up to 120 GHz
In this brief, small-signal characterizations of selectively implanted collector (SIC) and non-SIC SiGe-heterojunction bipolar transistors (HBT) fT-doublers up to 120 GHz are measured, analyzed, and compared with those of the corresponding single...
Joint information- and jamming-beamforming for full duplex secure communication
Comparison of hydrogen absorption in metallic and semiconductor single-walled Ge- and GeO2- doped carbon nanotubes
First-principles calculations were carried out to compare hydrogen absorption in pristine
metallic and semiconductor carbon nanotubes (CNTs) with the situation in their Ge- and
GeO2-doped counterparts. We found out that the pristine...