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A Dosimetry Methodology for Two-Photon Absorption Induced Single-Event Effects Measurements

Type: Journal Paper

Author : Khachatrian, Ani; Roche, Nicholas J.-H; McMorrow, Dale; Warner, Jeffrey H.; Buchner, Stephen P.; Melinger, Joseph S.

Publisher: IEEE

Year: 2014

Single-Event Effect Performance of a Commercial Embedded ReRAM

Type: Journal Paper

Author : Dakai Chen; Hak Kim; Phan, Anthony; Wilcox, Edward; LaBel, Kenneth; Buchner, Steffen; Khachatrian, Ani; Roche, Nicolas

Publisher: IEEE

Year: 2014

Simulation of Light-Matter Interaction and Two-Photon Absorption Induced Charge Deposition by Ultrashort Optical Pulses in Silicon

Type: Journal Paper

Author : Hales, Joel M.; McMorrow, Dale; Roche, Nicholas J.-H; Khachatrian, Ani; Warner, Jeffrey H.; Buchner, Stephen P.; Melinger, Joseph S.; Perry, Joseph W.; Lotshaw, William T.; Dubikovsky, Vladislav

Publisher: IEEE

Year: 2014

Single-Event Transient and Total Dose Response of Precision Voltage Reference Circuits Designed in a 90-nm SiGe BiCMOS Technology

Type: Journal Paper

Author : Cardoso, Adilson S.; Chakraborty, Partha S.; Karaulac, Nedeljko; Fleischhauer, David M.; Lourenco, Nelson E.; Fleetwood, Zachary E.; Omprakash, Anup P.; England, Troy D.; Jung, Sanghyuk; Najafizadeh, Laleh; Roche, Nicholas J.-H; Khachatrian, Ani; Warner, Jeffrey H.; McMorrow, Dale; Buchner, Stephen P.; En Xia Zhang; Cher Xuan Zhang; McCurdy, Michael W.; Reed, R.A.; Fleetwood, D.M.; Paki-Amouzou, Pauline; Cressler, John D.

Publisher: IEEE

Year: 2014

An Investigation of Single-Event Transients in C-SiGe HBT on SOI Current Mirror Circuits

Type: Journal Paper

Author : Seungwoo Jung; Lourenco, Nelson E.; Ickhyun Song; Oakley, Michael /A/.; England, Troy D.; Arora, Rajkumar; Cardoso, Adilson S.; Roche, Nicholas J.-H; Khachatrian, Ani; McMorrow, Dale; Buchner, Stephen P.; Melinger, Joseph S.; Warner, Jeffrey H.; Paki-Amouzou, Pauline; Babcock, Jeff /A/.; Cressler, John D.

Publisher: IEEE

Year: 2014

Design of Radiation-Hardened RF Low-Noise Amplifiers Using Inverse-Mode SiGe HBTs

Type: Journal Paper

Author : Ickhyun Song; Seungwoo Jung; Lourenco, Nelson E.; Raghunathan, Uppili S.; Fleetwood, Zachary E.; Zeinolabedinzadeh, Saeed; Gebremariam, Tikurete B.; Inanlou, Farzad; Roche, Nicholas J.-H; Khachatrian, Ani; McMorrow, Dale; Buchner, Stephen P.; Melinger, Joseph S.; Warner, Jeffrey H.; Paki-Amouzou, Pauline; Cressler, John D.

Publisher: IEEE

Year: 2014

On the Transient Response of a Complementary (npn <formula formulatype="inline"> <img src="/images/tex/515.gif" alt="+"> </formula> pnp) SiGe HBT BiCMOS Technology

Type: Journal Paper

Author : Lourenco, Nelson E.; Fleetwood, Zachary E.; Seungwoo Jung; Cardoso, Adilson S.; Chakraborty, Partha S.; England, Troy D.; Roche, Nicholas J.-H; Khachatrian, Ani; McMorrow, Dale; Buchner, Stephen P.; Melinger, Joseph S.; Warner, Jeffrey H.; Paki, Pauline; Kaynak, Mehmet; Tillack, Bernd; Knoll, D.; Cressler, John D.

Publisher: IEEE

Year: 2014

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A Dosimetry Methodology for Two-Photon Absorption Induced Single-Event Effects Measurements

Single-Event Effect Performance of a Commercial Embedded ReRAM

Simulation of Light-Matter Interaction and Two-Photon Absorption Induced Charge Deposition by Ultrashort Optical Pulses in Silicon

Single-Event Transient and Total Dose Response of Precision Voltage Reference Circuits Designed in a 90-nm SiGe BiCMOS Technology

An Investigation of Single-Event Transients in C-SiGe HBT on SOI Current Mirror Circuits

Design of Radiation-Hardened RF Low-Noise Amplifiers Using Inverse-Mode SiGe HBTs

On the Transient Response of a Complementary (npn <formula formulatype="inline"> <img src="/images/tex/515.gif" alt="+"> </formula> pnp) SiGe HBT BiCMOS Technology

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A Dosimetry Methodology for Two-Photon Absorption Induced Single-Event Effects Measurements

Single-Event Effect Performance of a Commercial Embedded ReRAM

Simulation of Light-Matter Interaction and Two-Photon Absorption Induced Charge Deposition by Ultrashort Optical Pulses in Silicon

Single-Event Transient and Total Dose Response of Precision Voltage Reference Circuits Designed in a 90-nm SiGe BiCMOS Technology

An Investigation of Single-Event Transients in C-SiGe HBT on SOI Current Mirror Circuits

Design of Radiation-Hardened RF Low-Noise Amplifiers Using Inverse-Mode SiGe HBTs

On the Transient Response of a Complementary (npn <formula formulatype="inline"> <img src="/images/tex/515.gif" alt="+"> </formula> pnp) SiGe HBT BiCMOS Technology