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Total Dose Effects in Tunnel-Diode Body-Contact SOI <formula formulatype="inline"> <img src="/images/tex/388.gif" alt="n"> </formula>MOSFETs

Type: Journal Paper

Author : Jiexin Luo; Jing Chen; Zhan Chai; Kai Lu; Weiwei He; Yan Yang; En Xia Zhang; Fleetwood, D.M.; Xi Wang

Publisher: IEEE

Year: 2014

Advanced SiGe BiCMOS Technology for Multi-Mrad Electronic Systems

Type: Journal Paper

Author : Fleetwood, Zachary E.; Kenyon, Eleazar W.; Lourenco, Nelson E.; Jain, Sonal; En Xia Zhang; England, Troy D.; Cressler, John D.; Schrimpf, R.D.; Fleetwood, D.M.

Publisher: IEEE

Year: 2014

RF Performance of Proton-Irradiated AlGaN/GaN HEMTs

Type: Journal Paper

Author : Jin Chen; En Xia Zhang; Cher Xuan Zhang; McCurdy, Michael W.; Fleetwood, D.M.; Schrimpf, R.D.; Kaun, Stephen W.; Kyle, Erin C. H.; Speck, James S.

Publisher: IEEE

Year: 2014

Dynamic Modeling of Radiation-Induced State Changes in <formula formulatype="inline"> <img src="/images/tex/21563.gif" alt="{\\hbox {HfO}_2}/\\hbox {Hf}"> </formula> 1T1R RRAM

Type: Journal Paper

Author : Bennett, W.G.; Hooten, N.C.; Schrimpf, R.D.; Reed, R.A.; Alles, Michael L.; En Xia Zhang; Weeden-Wright, Stephanie L.; Linten, D.; Jurczak, Malgorzata; Fantini, Andrea

Publisher: IEEE

Year: 2014

Impact of Technology Scaling in sub-100 nm nMOSFETs on Total-Dose Radiation Response and Hot-Carrier Reliability

Type: Journal Paper

Author : Arora, Rajkumar; Fleetwood, Zachary E.; En Xia Zhang; Lourenco, Nelson E.; Cressler, John D.; Fleetwood, D.M.; Schrimpf, R.D.; Sutton, Akil K.; Freeman, G.; Greene, Brian

Publisher: IEEE

Year: 2014

Heavy-Ion and Laser Induced Charge Collection in SiGe Channel <formula formulatype="inline"> <img src="/images/tex/21595.gif" alt="p{\\rm MOSFETs}"> </formula>

Type: Journal Paper

Author : En Xia Zhang; Samsel, I.K.; Hooten, N.C.; Bennett, W.G.; Funkhouser, Erik D.; Kai Ni; Ball, D.R.; McCurdy, Michael W.; Fleetwood, D.M.; Reed, R.A.; Alles, Michael L.; Schrimpf, R.D.; Linten, D.; Mitard, J.

Publisher: IEEE

Year: 2014

Mitigation of Total Dose Performance Degradation in an 8–18 GHz SiGe Reconfigurable Receiver

Type: Journal Paper

Author : Howard, Duane C.; Cardoso, Adilson S.; Fleetwood, Zachary E.; Lourenco, Nelson E.; England, Troy D.; Saha, Prabir K.; Shankar, Subramaniam; Diestelhorst, Ryan M.; En Xia Zhang; Cher Xuan Zhang; Paki-Amouzou, Pauline; Cressler, John D.

Publisher: IEEE

Year: 2014

Single-Event Transient Response of InGaAs MOSFETs

Type: Journal Paper

Author : Kai Ni; En Xia Zhang; Hooten, N.C.; Bennett, W.G.; McCurdy, Michael W.; Sternberg, A.L.; Schrimpf, R.D.; Reed, R.A.; Fleetwood, D.M.; Alles, Michael L.; Tae-Woo Kim; Jianqiang Lin; del Alamo, Jesus /A/.

Publisher: IEEE

Year: 2014

Bias Dependence of Total Ionizing Dose Effects in SiGe-<formula formulatype="inline"> <img src="/images/tex/21594.gif" alt="{{\\rm SiO}_2}/{{\\rm HfO}_2} p"> </formula>MOS FinFETs

Type: Journal Paper

Author : Guo Xing Duan; Cher Xuan Zhang; En Xia Zhang; Hachtel, Jordan; Fleetwood, D.M.; Schrimpf, R.D.; Reed, R.A.; Alles, Michael L.; Pantelides, Sokrates T.; Bersuker, Gennadi; Young, Chadwin D.

Publisher: IEEE

Year: 2014

Single- and Multiple-Event Induced Upsets in <formula formulatype="inline"> <img src="/images/tex/21256.gif" alt="{\\rm HfO}_2/{\\rm Hf}"> </formula> 1T1R RRAM

Type: Journal Paper

Author : Bennett, W.G.; Hooten, N.C.; Schrimpf, R.D.; Reed, R.A.; Mendenhall, Marcus H.; Alles, Michael L.; Jinshun Bi; En Xia Zhang; Linten, D.; Jurzak, Malgorzata; Fantini, Andrea

Publisher: IEEE

Year: 2014

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Total Dose Effects in Tunnel-Diode Body-Contact SOI <formula formulatype="inline"> <img src="/images/tex/388.gif" alt="n"> </formula>MOSFETs

Advanced SiGe BiCMOS Technology for Multi-Mrad Electronic Systems

RF Performance of Proton-Irradiated AlGaN/GaN HEMTs

Dynamic Modeling of Radiation-Induced State Changes in <formula formulatype="inline"> <img src="/images/tex/21563.gif" alt="{\\hbox {HfO}_2}/\\hbox {Hf}"> </formula> 1T1R RRAM

Impact of Technology Scaling in sub-100 nm nMOSFETs on Total-Dose Radiation Response and Hot-Carrier Reliability

Heavy-Ion and Laser Induced Charge Collection in SiGe Channel <formula formulatype="inline"> <img src="/images/tex/21595.gif" alt="p{\\rm MOSFETs}"> </formula>

Mitigation of Total Dose Performance Degradation in an 8–18 GHz SiGe Reconfigurable Receiver

Single-Event Transient Response of InGaAs MOSFETs

Bias Dependence of Total Ionizing Dose Effects in SiGe-<formula formulatype="inline"> <img src="/images/tex/21594.gif" alt="{{\\rm SiO}_2}/{{\\rm HfO}_2} p"> </formula>MOS FinFETs

Single- and Multiple-Event Induced Upsets in <formula formulatype="inline"> <img src="/images/tex/21256.gif" alt="{\\rm HfO}_2/{\\rm Hf}"> </formula> 1T1R RRAM

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Total Dose Effects in Tunnel-Diode Body-Contact SOI <formula formulatype="inline"> <img src="/images/tex/388.gif" alt="n"> </formula>MOSFETs

Advanced SiGe BiCMOS Technology for Multi-Mrad Electronic Systems

RF Performance of Proton-Irradiated AlGaN/GaN HEMTs

Dynamic Modeling of Radiation-Induced State Changes in <formula formulatype="inline"> <img src="/images/tex/21563.gif" alt="{\\hbox {HfO}_2}/\\hbox {Hf}"> </formula> 1T1R RRAM

Impact of Technology Scaling in sub-100&#x00A0;nm nMOSFETs on Total-Dose Radiation Response and Hot-Carrier Reliability

Heavy-Ion and Laser Induced Charge Collection in SiGe Channel <formula formulatype="inline"> <img src="/images/tex/21595.gif" alt="p{\\rm MOSFETs}"> </formula>

Mitigation of Total Dose Performance Degradation in an 8&#x2013;18&#x00A0;GHz SiGe Reconfigurable Receiver

Single-Event Transient Response of InGaAs MOSFETs

Bias Dependence of Total Ionizing Dose Effects in SiGe-<formula formulatype="inline"> <img src="/images/tex/21594.gif" alt="{{\\rm SiO}_2}/{{\\rm HfO}_2} p"> </formula>MOS FinFETs

Single- and Multiple-Event Induced Upsets in <formula formulatype="inline"> <img src="/images/tex/21256.gif" alt="{\\rm HfO}_2/{\\rm Hf}"> </formula> 1T1R RRAM

Impact of Technology Scaling in sub-100 nm nMOSFETs on Total-Dose Radiation Response and Hot-Carrier Reliability

Mitigation of Total Dose Performance Degradation in an 8–18 GHz SiGe Reconfigurable Receiver