Search

Now showing items 1-5 of 5

Impact of p-GaN Thermal Damage and Barrier Composition on Semipolar Green Laser Diodes

Type: Journal Paper

Author : Hardy, M.T.; Feng Wu; Chia-Yen Huang; Yuji Zhao; Feezell, Daniel F.; Nakamura, Shigenari; Speck, James S.; DenBaars, Steven P.

Publisher: IEEE

Year: 2014

An augmented Lagrangian coordination-decomposition algorithm for solving distributed non-convex programs

Type: Conference Paper

Author : Hours, J.-H. , Jones, C.N.

Publisher: IEEE

Year: 2014

InGaAs/GaAs quantum well lasers grown on exact GaP/Si (001)

Type: Journal Paper

Author : Xue Huang; Yuncheng Song; Masuda, T.; DaeHwan Jung; Minjoo Lee

Publisher: IET

Year: 2014

1.3 μm InAs/GaAs quantum-dot laser monolithically grown on Si substrates operating over 100°

Type: Journal Paper

Author : Chen, S.M.; Tang, M.C.; Wu, Junyong; Jiang, Qimeng; Dorogan, V.G.; Benamara, M.; Mazur, Y.I.; Salamo, G.J.; Seeds, Alwyn J.; Liu, Hongying

Publisher: IET

Year: 2014

The robustness evaluation method based on the worst situation for dynamic inverse control law

Type: Conference Paper

Author : Yang, Sen; Zhang, Xianglun

Publisher: IEEE

Year: 2014

Search

Impact of p-GaN Thermal Damage and Barrier Composition on Semipolar Green Laser Diodes

An augmented Lagrangian coordination-decomposition algorithm for solving distributed non-convex programs

InGaAs/GaAs quantum well lasers grown on exact GaP/Si (001)

1.3 μm InAs/GaAs quantum-dot laser monolithically grown on Si substrates operating over 100°

The robustness evaluation method based on the worst situation for dynamic inverse control law

Author

Publisher

Year

Keywords

Type

Language (ISO)

Content Type

Publication Title

Search

Filters

Impact of p-GaN Thermal Damage and Barrier Composition on Semipolar Green Laser Diodes

An augmented Lagrangian coordination-decomposition algorithm for solving distributed non-convex programs

InGaAs/GaAs quantum well lasers grown on exact GaP/Si (001)

1.3 &#x003BC;m InAs/GaAs quantum-dot laser monolithically grown on Si substrates operating over 100&#x000B0;

The robustness evaluation method based on the worst situation for dynamic inverse control law

1.3 μm InAs/GaAs quantum-dot laser monolithically grown on Si substrates operating over 100°