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Simulation research on surface charging phenomena across solid dielectrics prior to flashover in vacuum

Type: Conference Paper

Author : Lang, Yan; Zhang, Guan-Jun; Zhao, Ai-Xuan; Su, Guo-Qiang; Song, Bai-Peng

Publisher: IEEE

Year: 2014

Passivation of SiO<inf>2</inf>/SiC interface with La<inf>2</inf>O<inf>3</inf> capped oxidation

Type: Conference Paper

Author : Munekiyo, S.; Lei, Y.M.; Natori, K.; Iwai, H.; Kawanago, T.; Kakushima, K.; Kataoka, K.; Nishiyama, A.; Sugii, N.; Wakabayashi, H.; Tsutsui, K.; Furuhashi, M.; Miura, N.; Yamakawa, S.

Publisher: IEEE

Year: 2014

TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions

Type: Conference Paper

Author : Monti, F.; Reggiani, S.; Barone, G.; Gnani, E.; Gnudi, A.; Baccarani, G.; Poli, S.; Chuang, M.-Y.; Tian, W.; Varghese, D.; Wise, R.

Publisher: IEEE

Year: 2014

QBROKAGE: A Genetic Approach for QoS Cloud Brokering

Type: Conference Paper

Author : Anastasi, Gaetano F.; Carlini, Emanuele; Coppola, Massimo; Dazzi, Patrizio

Publisher: IEEE

Year: 2014

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Simulation research on surface charging phenomena across solid dielectrics prior to flashover in vacuum

Passivation of SiO<inf>2</inf>/SiC interface with La<inf>2</inf>O<inf>3</inf> capped oxidation

TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions

QBROKAGE: A Genetic Approach for QoS Cloud Brokering

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Simulation research on surface charging phenomena across solid dielectrics prior to flashover in vacuum

Passivation of SiO<inf>2</inf>/SiC interface with La<inf>2</inf>O<inf>3</inf> capped oxidation

TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions

QBROKAGE: A Genetic Approach for QoS Cloud Brokering