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Dual-Metal-Gate InAs Tunnel FET With Enhanced Turn-On Steepness and High On-Current

Type: Journal Paper

Author : Beneventi, Giovanni Betti; Gnani, Elena; Gnudi, A.; Reggiani, S.; Baccarani, G.

Publisher: IEEE

Year: 2014

Effect of Random, Discrete Source Dopant Distributions on Nanowire Tunnel FETs

Type: Journal Paper

Author : Sylvia, Somaia Sarwat; Habib, K. M. Masum; Khayer, M. Abul; Alam, Khairul; Neupane, Mahesh; Lake, Roger K.

Publisher: IEEE

Year: 2014

An improved dynamic data replica selection and placement in cloud

Type: Conference Paper

Author : Rajalakshmi, A.; Vijayakumar, D.; Srinivasagan, K.G.

Publisher: IEEE

Year: 2014

Author

Alam, Khairul (1)

Baccarani, G. (1)

Beneventi, Giovanni Betti (1)

Gnani, Elena (1)

Gnudi, A. (1)

Habib, K. M. Masum (1)

Khayer, M. Abul (1)

Lake, Roger K. (1)

Neupane, Mahesh (1)

Rajalakshmi, A. (1)

Publisher

IEEE (3)

Year

2014 (3)

Keywords

field effect transistors (2)

III-V semiconductors (2)

InAs (2)

indium compounds (2)

inverse subthreshold slope (2)

tunnel transistors (2)

2020 International Technology Roadmap for Semiconductors requirements (1)

average doping density (1)

Chemicals (1)

discrete nature (1)

Type

Journal Paper (2)

Conference Paper (1)

Language (ISO)

English (3)

Content Type

Metadata Only (3)

Publication Title

Electron Devices, IEEE Transactions on (2)

ecent Trends in Information Technology (ICRTIT), 2014 International Conference on (1)

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