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RISStudy of Electrical and Optical Properties of LEDs Based on Heterostructure InGaN/AlGaN/GaN
Year: 2011
Abstract:
defects of GaN are not recombination centers and some of which
are related to radiation. In fact, structure defects of nitride lightemitting
diodes are different from...
A reliability lab-on-chip using programmable arrays
Publisher: IEEE
Year: 2014
A 490-nA, 43-ppm/°C, sub-0.8-V supply voltage reference
Publisher: IEEE
Year: 2014
8 hydroxyarctigenin isolated from safflower sprouts inhibits melanogenesis of melan a cells and light quality during the sprout growth determines the compound yield
Publisher: Korean Society for Horticultural Science
Year: 2014
Effects of insertion of hole injection layers on pentacene rectifying diodes
Publisher: American Scientific Publishers
Year: 2014
Hot electron of steady-state transport in submicrometer ZnSe and ZnS n+-i(n)-n+ diodes
Year: 2010
Abstract:
Monte Carlo simulation of steady-state electron transport in ZnSe and ZnS diodes of n+-i(n)-n+ structure with a 0.2 µm
active layer length is described. The anode voltage ranges from 1 to 5 V. The distributions of electron energies and...
Quadratic-backtracking algorithm for string reconstruction from substring compositions
Publisher: IEEE
Year: 2014
Vision-based autonomous load handling for automated guided vehicles
Publisher: IEEE
Year: 2014
Manned sample return mission to phobos: A technology demonstration for human exploration of Mars
Publisher: IEEE
Year: 2014
Evaluation of Fire Risk Based on Generalized Regression
Publisher: IEEE
Year: 2014