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Diamond Metal–Semiconductor Field-Effect Transistor With Breakdown Voltage Over 1.5 kV

Type: Journal Paper

Author : Umezawa, Hitoshi; Matsumoto, Tad; Shikata, Shin-ichi

Publisher: IEEE

Year: 2014

Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT

Type: Journal Paper

Author : Kawanago, T.; Kakushima, K.; Kataoka, Yasuyuki; Nishiyama, A.; Sugii, Nobuyuki; Wakabayashi, H.; Tsutsui, K.; Natori, K.; Iwai, Hisato

Publisher: IEEE

Year: 2014

TiO<sub>2</sub>-Dielectric AlGaN/GaN/Si Metal-Oxide-Semiconductor High Electron Mobility Transistors by Using Nonvacuum Ultrasonic Spray Pyrolysis Deposition

Type: Journal Paper

Author : Bo-Yi Chou; Ching-Sung Lee; Cheng-Long Yang; Wei-Chou Hsu; Han-Yin Liu; Meng-Hsueh Chiang; Wen-Ching Sun; Sung-Yen Wei; Sheng-Min Yu

Publisher: IEEE

Year: 2014

Voltage regulation considerations for the design of hybrid distribution transformers

Type: Conference Paper

Author : Radi, M.A.; Darwish, M.; Alqarni, M.

Publisher: IEEE

Year: 2014

Optimized Pre-Treatment Process for MOS-GaN Devices Passivation

Type: Journal Paper

Author : Chakroun, Ahmed; Maher, Hassan; Al Alam, Elias; Souifi, Abdelkader; Aimez, Vincent; Ares, Richard; Jaouad, Abdelatif

Publisher: IEEE

Year: 2014

Improving Self-Heating Effect and Maximum Power Density in SOI MESFETs by Using the Hole’s Well Under Channel

Type: Journal Paper

Author : Ramezani, Zahra; Orouji, Ali Asghar

Publisher: IEEE

Year: 2014

Monolithically Integrated MESFET Devices on a High-Speed Silicon Photonics Platform

Type: Journal Paper

Author : Novack, Ari; Shi, Ruoyun; Streshinsky, Matthew; Jingcheng Tao; Kang Tan; Lim, Andy Eu-Jin; Guo-Qiang Lo; Baehr-Jones, Tom; Hochberg, Michael

Publisher: IEEE

Year: 2014

Proton Radiation-Induced Void Formation in Ni/Au-Gated AlGaN/GaN HEMTs

Type: Journal Paper

Author : Koehler, Andrew D.; Specht, Petra; Anderson, Travis J.; Weaver, Bradley D.; Greenlee, Jordan D.; Tadjer, Marko J.; Porter, Matthew; Wade, Mark; Dubon, Oscar C.; Hobart, Karl D.; Weatherford, Todd R.; Kub, Francis J.

Publisher: IEEE

Year: 2014

Asymmetric Gate Schottky-Barrier Graphene Nanoribbon FETs for Low-Power Design

Type: Journal Paper

Author : Gholipour, M.; Masoumi, N.; Chen, Y.-Y.C.; Deming Chen; Pourfath, M.

Publisher: IEEE

Year: 2014

Unsignalized cooperative optimization control method based on vehicle speed guidance and information interaction

Type: Conference Paper

Author : Cai, Baigen; Ziru Zheng; Wei ShangGuan; Jian Wang

Publisher: IEEE

Year: 2014

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Diamond Metal–Semiconductor Field-Effect Transistor With Breakdown Voltage Over 1.5 kV

Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT

TiO<sub>2</sub>-Dielectric AlGaN/GaN/Si Metal-Oxide-Semiconductor High Electron Mobility Transistors by Using Nonvacuum Ultrasonic Spray Pyrolysis Deposition

Voltage regulation considerations for the design of hybrid distribution transformers

Optimized Pre-Treatment Process for MOS-GaN Devices Passivation

Improving Self-Heating Effect and Maximum Power Density in SOI MESFETs by Using the Hole’s Well Under Channel

Monolithically Integrated MESFET Devices on a High-Speed Silicon Photonics Platform

Proton Radiation-Induced Void Formation in Ni/Au-Gated AlGaN/GaN HEMTs

Asymmetric Gate Schottky-Barrier Graphene Nanoribbon FETs for Low-Power Design

Unsignalized cooperative optimization control method based on vehicle speed guidance and information interaction

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Diamond Metal&#x2013;Semiconductor Field-Effect Transistor With Breakdown Voltage Over 1.5 kV

Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT

TiO<sub>2</sub>-Dielectric AlGaN/GaN/Si Metal-Oxide-Semiconductor High Electron Mobility Transistors by Using Nonvacuum Ultrasonic Spray Pyrolysis Deposition

Voltage regulation considerations for the design of hybrid distribution transformers

Optimized Pre-Treatment Process for MOS-GaN Devices Passivation

Improving Self-Heating Effect and Maximum Power Density in SOI MESFETs by Using the Hole&#x2019;s Well Under Channel

Monolithically Integrated MESFET Devices on a High-Speed Silicon Photonics Platform

Proton Radiation-Induced Void Formation in Ni/Au-Gated AlGaN/GaN HEMTs

Asymmetric Gate Schottky-Barrier Graphene Nanoribbon FETs for Low-Power Design

Unsignalized cooperative optimization control method based on vehicle speed guidance and information interaction

Diamond Metal–Semiconductor Field-Effect Transistor With Breakdown Voltage Over 1.5 kV

Improving Self-Heating Effect and Maximum Power Density in SOI MESFETs by Using the Hole’s Well Under Channel