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Effect of Self-Heating on the Drain Current Transient Response in AlGaN/GaN HEMTs

Type: Journal Paper

Author : Yamin Zhang; Shiwei Feng; Hui Zhu; Chunsheng Guo; Bing Deng; Guangchen Zhang

Publisher: IEEE

Year: 2014

Evidence of Fowler–Nordheim Tunneling in Gate Leakage Current of AlGaN/GaN HEMTs at Room Temperature

Type: Journal Paper

Author : Turuvekere, S.; Rawal, D.S.; DasGupta, A.; DasGupta, N.

Publisher: IEEE

Year: 2014

Effect of GaN Channel Layer Thickness on DC and RF Performance of GaN HEMTs With Composite AlGaN/GaN Buffer

Type: Journal Paper

Author : Xinhua Wang; Sen Huang; Yingkui Zheng; Ke Wei; Xiaojuan Chen; Haoxiang Zhang; Xinyu Liu

Publisher: IEEE

Year: 2014

RF Performance of Proton-Irradiated AlGaN/GaN HEMTs

Type: Journal Paper

Author : Jin Chen; En Xia Zhang; Cher Xuan Zhang; McCurdy, Michael W.; Fleetwood, D.M.; Schrimpf, R.D.; Kaun, Stephen W.; Kyle, Erin C. H.; Speck, James S.

Publisher: IEEE

Year: 2014

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Effect of Self-Heating on the Drain Current Transient Response in AlGaN/GaN HEMTs

Evidence of Fowler–Nordheim Tunneling in Gate Leakage Current of AlGaN/GaN HEMTs at Room Temperature

Effect of GaN Channel Layer Thickness on DC and RF Performance of GaN HEMTs With Composite AlGaN/GaN Buffer

RF Performance of Proton-Irradiated AlGaN/GaN HEMTs

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Effect of Self-Heating on the Drain Current Transient Response in AlGaN/GaN HEMTs

Evidence of Fowler&#x2013;Nordheim Tunneling in Gate Leakage Current of AlGaN/GaN HEMTs at Room Temperature

Effect of GaN Channel Layer Thickness on DC and RF Performance of GaN HEMTs With Composite AlGaN/GaN Buffer

RF Performance of Proton-Irradiated AlGaN/GaN HEMTs

Evidence of Fowler–Nordheim Tunneling in Gate Leakage Current of AlGaN/GaN HEMTs at Room Temperature